The internal electric field distribution in bilayer organic light emitting diodes

被引：72

作者：

Martin, SJ

Verschoor, GLB

Webster, MA

Walker, AB ^{[1
]}

机构：

[1] Univ Bath, Dept Phys, Bath BA2 7AY, Avon, England

[2] Sharp Labs Europe, Oxford OX4 4GA, England

来源：

ORGANIC ELECTRONICS | 2002年 / 3卷 / 3-4期

基金：

英国工程与自然科学研究理事会;

关键词：

OLED; electroabsorption spectroscopy; bilayer; device simulation;

D O I：

10.1016/S1566-1199(02)00050-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The internal electric field distribution in a bilayer 4,4'-bis[N-(1-napthyl)-N-phenylamino]-biphenyl/tris-(8-hydroxyquinoline) aluminium organic light emitting diode has been investigated experimentally using electroabsorption spectroscopy. The experimental results have been compared to those obtained from a drift-diffusion device simulation, further validating the model and highlighting the potential worth of such modelling. With the aid of the simulation, the electric field distribution can be explained in terms of charge carrier accumulation at the interface between the two organic layers, due to the HOMO and LUMO band offsets, and charge injection into the device, demonstrating the influence of contact materials on device behaviour. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：129 / 141

页数：13

共 31 条

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