Fabrication of sub-μm bipolar transistor structures by scanning probe microscopy

被引：20

作者：

Richter, S ^{[1
]}

Cahen, D ^{[1
]}

Cohen, SR ^{[1
]}

Gartsman, K ^{[1
]}

Lyakhovitskaya, V ^{[1
]}

Manassen, Y ^{[1
]}

机构：

[1] Weizmann Inst Sci, IL-76100 Rehovot, Israel

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 13期

关键词：

D O I：

10.1063/1.122309

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show how sub-mu m sized transistor structures (down to 50 nm cross section) can be fabricated by thermally assisted electromigration of mobile dopants inside the semiconductor CuInSe2. Small device structures are fabricated by application of an electric field to the sample via the contact, defined by a conducting atomic force microscope tip. The structures are characterized by nm scale scanning spreading resistance and scanning capacitance measurements to reveal the inhomogeneous doping profiles created by the electric field. (C) 1998 American Institute of Physics. [S0003-6951(98)03539-6].

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页码：1868 / 1870

页数：3

相关论文

共 18 条

[1]

[Anonymous], 1984, SEMICONDUCTOR CONTAC

[2] ROOM-TEMPERATURE, ELECTRIC-FIELD INDUCED CREATION OF STABLE DEVICES IN CULNSE2 CRYSTALS [J].

CAHEN, D ;

GILET, JM ;

SCHMITZ, C ;

CHERNYAK, L ;

GARTSMAN, K ;

JAKUBOWICZ, A .

SCIENCE, 1992, 258 (5080) :271-274

[3] ELECTRONIC EFFECTS OF ION MOBILITY IN SEMICONDUCTORS - SEMIONIC BEHAVIOR OF CUINSE2 [J].

CHERNYAK, L ;

GARTSMAN, K ;

CAHEN, D ;

STAFSUDD, OM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1995, 56 (09) :1165-1191

[4] Electronic effects of ion mobility in semiconductors: Mixed electronic-ionic behavior and device creation in Si:Li [J].

Chernyak, L ;

Lyakhovitskaya, V ;

Richter, S ;

Jakubowicz, A ;

Manassen, Y ;

Cohen, SR ;

Cahen, D .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (05) :2749-2762

[5]

CHERNYAK L, 1995, THESIS WEIZMANN I

[6] NANOMECHANICS OF A AU-IR CONTACT USING A BIDIRECTIONAL ATOMIC FORCE MICROSCOPE [J].

COHEN, SR ;

NEUBAUER, G ;

MCCLELLAND, GM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (04) :3449-3454

[7] LATERAL AND VERTICAL DOPANT PROFILING IN SEMICONDUCTORS BY ATOMIC-FORCE MICROSCOPY USING CONDUCTING TIPS [J].

DEWOLF, P ;

SNAUWAERT, J ;

HELLEMANS, L ;

CLARYSSE, T ;

VANDERVORST, W ;

DOLIESLAEGER, M ;

QUAEYHAEGENS, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03) :1699-1704

[8] Quantitative scanning capacitance microscopy analysis of two-dimensional dopant concentrations at nanoscale dimensions [J].

Erickson, A ;

Sadwick, L ;

Neubauer, G ;

Kopanski, J ;

Adderton, D ;

Rogers, M .

JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (02) :301-304

[9] Direct evidence for diffusion and electromigration of Cu in CuInSe2 [J].

Gartsman, K ;

Chernyak, L ;

Lyahovitskaya, V ;

Cahen, D ;

Didik, V ;

Kozlovsky, V ;

Malkovich, R ;

Skoryatina, E ;

Usacheva, V .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (09) :4282-4285

[10]

Herberholz R., 1997, 26 IEEE PHOT SPEC C, P323