The degradation of GaAlAs red light-emitting diodes under continuous and low-speed pulse operations

被引：22

作者：

Yanagisawa, T ^{[1
]}

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 305, Japan

来源：

MICROELECTRONICS AND RELIABILITY | 1998年 / 38卷 / 10期

关键词：

D O I：

10.1016/S0026-2714(98)00029-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Long-term accelerated degradation tests on GaAlAs red light-emitting diodes were performed under continuous and low-speed pulse operation, and the differences in the degradation and lifetime were clarified. The major factor causing the degradation was suggested to be the decrease in the radiative recombination probability due to defect generation. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：1627 / 1630

页数：4