A DEGRADATION DUE TO SURFACE OXIDATIONS IN GAALAS RED-LIGHT EMITTING DIODES AND A PREVENTION OF IT

被引：8

作者：

YAMANAKA, H

KOIKE, S

机构：

[1] Matsushita Electronics Corp,, Semiconductor Div, Nagaokakyo, Jpn, Matsushita Electronics Corp, Semiconductor Div, Nagaokakyo, Jpn

来源：

关键词：

D O I：

10.1149/1.2113844

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：381 / 383

页数：3

共 6 条

DYMENT, JC ;

ROZGONYI, GA .

GANNON, JJ ;

NUESE, CJ .

ISHIGURO, H ;

SAWA, K ;

NAGAO, S ;

YAMANAKA, H ;

KOIKE, S .

NISHIZAWA, J ;

SUTO, K ;

TESHIMA, T .

[5] ELEMENTAL ARSENIC IN NATIVE OXIDE-FILMS ON ALXGA1-XAS [J].

SCHWARTZ, GP ;

DUTT, BV ;

GUALTIERI, GJ .

[6]

Takahashi K., 1982, JEE (Journal of Electronic Engineering), V19, P50