MINORITY-CARRIER LIFETIME MEASUREMENTS OF EFFICIENT GAALAS P-N HETEROJUNCTIONS

[1] EFFICIENT ELECTROLUMINESCENCE FROM ZINC-DIFFUSED GA1-XALXAS DIODES AT 25 DEGREES C [J]. APPLIED PHYSICS LETTERS, 1971, 19 (04) : 98 - &

[2] ETTENBERG M, 1976, J APPL PHYS, V47, P4

[3] DEEP-LEVEL CONTROLLED LIFETIME AND LUMINESCENCE EFFICIENCY IN GAP [J]. APPLIED PHYSICS LETTERS, 1975, 26 (12) : 702 - 704

[4] ITO A, 1969, TR32 TOH U RIEC TECH

[5] KOCK AJRD, 1971, J ELECTROCHEM SOC, V118, P1851

[6] VACANCY CLUSTERS IN DISLOCATION-FREE SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 100 - &

[7] DEEP-LEVEL DISTRIBUTIONS NEAR P-N-JUNCTIONS IN LPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1533 - 1537

[8] LIN AL, 1976, J APPL PHYS, V47, P1852, DOI 10.1063/1.322904

[9] PROPERTIES OF SN-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) : 1638 - 1645

[10] NEARLY PERFECT CRYSTAL-GROWTH OF III-V COMPOUNDS BY TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOR-PRESSURE [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 215 - 222

[1] EFFICIENT ELECTROLUMINESCENCE FROM ZINC-DIFFUSED GA1-XALXAS DIODES AT 25 DEGREES C [J]. APPLIED PHYSICS LETTERS, 1971, 19 (04) : 98 - &

[2] ETTENBERG M, 1976, J APPL PHYS, V47, P4

[3] DEEP-LEVEL CONTROLLED LIFETIME AND LUMINESCENCE EFFICIENCY IN GAP [J]. APPLIED PHYSICS LETTERS, 1975, 26 (12) : 702 - 704

[4] ITO A, 1969, TR32 TOH U RIEC TECH

[5] KOCK AJRD, 1971, J ELECTROCHEM SOC, V118, P1851

[6] VACANCY CLUSTERS IN DISLOCATION-FREE SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 100 - &

[7] DEEP-LEVEL DISTRIBUTIONS NEAR P-N-JUNCTIONS IN LPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1533 - 1537

[8] LIN AL, 1976, J APPL PHYS, V47, P1852, DOI 10.1063/1.322904

[9] PROPERTIES OF SN-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) : 1638 - 1645

[10] NEARLY PERFECT CRYSTAL-GROWTH OF III-V COMPOUNDS BY TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOR-PRESSURE [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 215 - 222