DEEP-LEVEL DISTRIBUTIONS NEAR P-N-JUNCTIONS IN LPE GAAS

[1] MAJORITY-CARRIER TRAPS IN NORMAL-TYPE AND PARA-TYPE EPITAXIAL GAAS [J]. ELECTRONICS LETTERS, 1975, 11 (14) : 286 - 288

[2] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 1929 - &

[3] HENRY CH, TO BE PUBLISHED

[4] KUKIMOTO H, 1974, J JAPAN SOC APPL P S, V43, P95

[5] NONRADIATIVE RECOMBINATION AT DEEP LEVELS IN GAAS AND GAP BY LATTICE-RELAXATION MULTIPHONON EMISSION [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (22) : 1525 - 1528

[6] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY [J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) : 1053 - 1066

[7] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[8] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3014 - 3022

[9] ANOMALOUS BEHAVIOR OF COPPER DURING ACCEPTOR DIFFUSIONS INTO GALLIUM ARSENIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (06) : 564 - +

[10] FEEDBACK METHOD FOR INVESTIGATING CARRIER DISTRIBUTIONS IN SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (10) : 1103 - &

[1] MAJORITY-CARRIER TRAPS IN NORMAL-TYPE AND PARA-TYPE EPITAXIAL GAAS [J]. ELECTRONICS LETTERS, 1975, 11 (14) : 286 - 288

[2] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 1929 - &

[3] HENRY CH, TO BE PUBLISHED

[4] KUKIMOTO H, 1974, J JAPAN SOC APPL P S, V43, P95

[5] NONRADIATIVE RECOMBINATION AT DEEP LEVELS IN GAAS AND GAP BY LATTICE-RELAXATION MULTIPHONON EMISSION [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (22) : 1525 - 1528

[6] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY [J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) : 1053 - 1066

[7] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[8] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3014 - 3022

[9] ANOMALOUS BEHAVIOR OF COPPER DURING ACCEPTOR DIFFUSIONS INTO GALLIUM ARSENIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (06) : 564 - +

[10] FEEDBACK METHOD FOR INVESTIGATING CARRIER DISTRIBUTIONS IN SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (10) : 1103 - &