Short-range versus long-range electron-hole exchange interactions in semiconductor quantum dots

被引:94
作者
Franceschetti, A [1 ]
Wang, LW [1 ]
Fu, H [1 ]
Zunger, A [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源
PHYSICAL REVIEW B | 1998年 / 58卷 / 20期
关键词
D O I
10.1103/PhysRevB.58.R13367
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using a many-body approach based on atomistic pseudopotential wave functions we show that the electron-hole exchange interaction in semiconductor quantum dots is characterized by a large, previously neglected long-range component, originating from monopolar interactions of the transition density between different unit cells. The calculated electron-hole exchange splitting of CdSe and InP nanocrystals is in good agreement with recent experimental measurements. [S0163-1829(98)51144-7].
引用
收藏
页码:13367 / 13370
页数:4
相关论文
共 25 条
[1]   COLLECTIVE EXCITE STATES AND DIELECTRIC CONSTANT IN INSULATORS [J].
ABE, Y ;
MORITA, A ;
OSAKA, Y .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (10) :1576-&
[2]   LONGITUDINAL-TRANSVERSE SPLITTING IN WANNIER EXCITONS AND POLARITON STATES [J].
ANDREANI, LC ;
BASSANI, F ;
QUATTROPANI, A .
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1988, 10 (12) :1473-1486
[3]   Exchange interaction in InAs nanocrystal quantum dots [J].
Banin, U ;
Lee, JC ;
Guzelian, AA ;
Kadavanich, AV ;
Alivisatos, AP .
SUPERLATTICES AND MICROSTRUCTURES, 1997, 22 (04) :559-567
[4]   IDENTIFICATION OF RADIATIVE TRANSITIONS IN HIGHLY POROUS SILICON [J].
CALCOTT, PDJ ;
NASH, KJ ;
CANHAM, LT ;
KANE, MJ ;
BRUMHEAD, D .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (07) :L91-L98
[5]   Enhancement of electron-hole exchange interaction in CdSe nanocrystals: A quantum confinement effect [J].
Chamarro, M ;
Gourdon, C ;
Lavallard, P ;
Lublinskaya, O ;
Ekimov, AI .
PHYSICAL REVIEW B, 1996, 53 (03) :1336-1342
[6]   DISPERSION-RELATION OF LT MIXED-MODE POLARITONS [J].
CHO, K .
SOLID STATE COMMUNICATIONS, 1980, 33 (09) :911-914
[7]   Band-edge exciton in quantum dots of semiconductors with a degenerate valence band: Dark and bright exciton states [J].
Efros, AL ;
Rosen, M ;
Kuno, M ;
Nirmal, M ;
Norris, DJ ;
Bawendi, M .
PHYSICAL REVIEW B, 1996, 54 (07) :4843-4856
[8]   Direct pseudopotential calculation of exciton Coulomb and exchange energies in semiconductor quantum dots [J].
Franceschetti, A ;
Zunger, A .
PHYSICAL REVIEW LETTERS, 1997, 78 (05) :915-918
[9]  
FU H, UNPUB
[10]   InP quantum dots: Electronic structure, surface effects, and the redshifted emission [J].
Fu, HX ;
Zunger, A .
PHYSICAL REVIEW B, 1997, 56 (03) :1496-1508