Exchange interaction in InAs nanocrystal quantum dots

被引:61
作者
Banin, U
Lee, JC
Guzelian, AA
Kadavanich, AV
Alivisatos, AP
机构
[1] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA
[2] Lawrence Berkeley Lab, Div Sci Mat, Berkeley, CA 94720 USA
关键词
semiconductor nanocrystal; quantum dots; exchange splitting; InAs;
D O I
10.1006/spmi.1997.0504
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The near band-gap level structure in high-quality colloidal InAs nanocrystal quantum dots within the very strong confinement regime is investigated. Size-selective photoluminescence excitation and fluorescence line narrowing measurements reveal a size-dependent splitting between the absorbing and the emitting states. The splitting is assigned to the confinement-enhanced electron-hole exchange interaction. The size dependence of the splitting significantly deviates from the idealized 1/r(3) scaling law for the exchange splitting. A model incorporating a finite barrier which allows for wavefunction leakage is introduced. The model reproduces the observed 1/r(2) dependence of the splitting and good agreement with the experimental data is obtained. The smaller barriers for embedded InAs dots grown by molecular-beam epitaxy, are predicted to result in smaller exchange splitting as compared with colloidal dots with a similar number of atoms. (C) 1997 Academic Press Limited.
引用
收藏
页码:559 / 567
页数:9
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