Mechanical properties of epitaxial 3C silicon carbide thin films

被引:41
作者
Jackson, KM [1 ]
Dunning, J
Zorman, CA
Mehregany, M
Sharpe, WN
机构
[1] Johns Hopkins Univ, Dept Mech Engn, Baltimore, MD 21218 USA
[2] Case Western Reserve Univ, Dept Comp Sci & Elect Engn, Cleveland, OH 44106 USA
关键词
3C silicon carbide (3C-SiC); mechanical properties; microfabrication; tensile testing;
D O I
10.1109/JMEMS.2005.847933
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Microscale tensile specimens of epitaxial 3C silicon carbide (3C-SiC) thin films were fabricated on Si substrates and tested to provide measurements of strength and elastic modulus. Samples were fabricated using both micromolding and reactive ion etching (RIE) processes to pattern the 3C-SiC films. All specimens were on the (100) plane with a (110) tensile direction. Testing was performed on a microsample tensile testing machine previously used on other materials. The samples had a thickness of 0.5 to 2 mu m, a gauge length of 4 mm, and a minimum width of 600 mu n. Testing results show an average strength of 1.19 +/- 0.53 GPa and 1.65 +/- 0.39 GPa for micromolded and RIE patterned specimens, respectively. The elastic modulus was measured to be 424 +/- 44 GPa, which was consistent with but slightly lower than the elastic modulus calculated with single crystal elastic constants found by ab initio calculations.
引用
收藏
页码:664 / 672
页数:9
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