Single-crystal field-effect transistors based on organic selenium-containing semiconductor

被引:20
作者
Zeis, R
Kloç, C
Takimiya, K
Kunugi, Y
Konda, Y
Niihara, N
Otsubo, T
机构
[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
[2] Hiroshima Univ, Grad Sch Engn, Higashihiroshima 7398527, Japan
[3] Hiroshima Univ, Fac Integrated Arts & Sci, Hiroshima 7398521, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 6A期
关键词
organic semiconductor; field effect transistor; organic single crystal; mobility;
D O I
10.1143/JJAP.44.3712
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the fabrication and characterization of single-crystal field-effect transistors (FETs) based on 2,6-diphenylbenzo[1,2-b:4,5-6']diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode devices. At room temperature, for the best devices, the threshold voltage is less than -7 V and charge carrier mobility is nearly gate bias independent, ranging from 1 to 1.5 cm(2)/(Vs) depending on the source-drain bias. Mobility is increased slightly by cooling below room temperature and decreases below 280 K.
引用
收藏
页码:3712 / 3714
页数:3
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