Feasibility study of RF sputtered ZnO film for surface micromachining

被引:12
作者
Bhatt, V [1 ]
Pal, P [1 ]
Chandra, S [1 ]
机构
[1] Indian Inst Technol, Ctr Appl Res Elect, New Delhi 110016, India
关键词
zinc oxide (ZnO); MEMS; RE sputtcring; surface micromachining; sacrificial layer;
D O I
10.1016/j.surfcoat.2004.10.118
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In the present studies, we have investigated the feasibility of using RF sputtered zinc oxide (ZnO) films as sacrificial layer in surface micromachining process. For this application, it is required that there should be a gradual slope in the ZnO platform after etching. This gives better step coverage during structural material deposition and patterning. ZnO is a very sensitive material and is susceptible to degradation by acids, bases and even water. These films may easily be damaged or degraded in the micromachining process for fabricating micro structures. In this work, we focus on techniques to (i) deposit ZnO films with good characteristics for use in microelectromechanical systems (MEMS) technology and (ii) protect these films against degradation in subsequent processing steps. The films were prepared on Si substrate using RF diode sputtering in argon atmosphere. Characterization of these films includes X-ray diffraction, IR and optical transmission spectra measurements, electron microscopy, ellipsometry and etching behavior. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:304 / 308
页数:5
相关论文
共 17 条
[1]   Optically pumped lasing of ZnO at room temperature [J].
Bagnall, DM ;
Chen, YF ;
Zhu, Z ;
Yao, T ;
Koyama, S ;
Shen, MY ;
Goto, T .
APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232
[2]  
BAHADUR H, 2003, INT WORKSH PHYS SEM, P298
[3]   Room-temperature rf magnetron sputtered ZnO for electromechanical devices [J].
Barker, A ;
Crowther, S ;
Rees, D .
SENSORS AND ACTUATORS A-PHYSICAL, 1997, 58 (03) :229-235
[4]  
BHATT V, 2003, INT WORKSH PHYS SEM, P740
[5]   JNK1 is required for maintenance of neuronal microtubules and controls phosphorylation of microtubule-associated proteins [J].
Chang, LF ;
Jones, Y ;
Ellisman, MH ;
Goldstein, LSB ;
Karin, M .
DEVELOPMENTAL CELL, 2003, 4 (04) :521-533
[6]   Surface micromachined piezoelectric accelerometers (PiXLs) [J].
DeVoe, DL ;
Pisano, AP .
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2001, 10 (02) :180-186
[7]   THIN-FILM INDUCED STRESS IN GAAS RIDGE-WAVE-GUIDE STRUCTURES INTEGRATED WITH SPUTTER-DEPOSITED ZNO FILMS [J].
KIM, HK ;
KLEEMEIER, W ;
LI, YB ;
LANGER, DW ;
CASSIDY, DT ;
BRUCE, DM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (03) :1328-1332
[8]   Deposition of ZnO thin films by the ultrasonic spray pyrolysis technique [J].
Lee, Y ;
Kim, H ;
Roh, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (4A) :2423-2428
[9]  
LOU KC, P IEEE ULTR S PISC N
[10]   Two-step metalorganic chemical vapor deposition growth of piezoelectric ZnO thin film on SiO2/Si substrate [J].
Muthukumar, S ;
Emanetoglu, NW ;
Patounakis, G ;
Gorla, CR ;
Liang, S ;
Lu, Y .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (04) :1850-1853