Formation of thin silicon nitride layers on Si by low energy N2+ ion bombardment

The formation of nitride layers in silicon due to low-energy implantation of nitrogen in a wide range of ion bombardment parameters (energy E and angle of incidence theta) and for different temperatures of subsequent annealing (T) has been studied using Anger Electron Spectroscopy (AES), Secondary Ion Mass Spectrometry (SIMS) and Fourier Transform InfraRed Spectroscopy (FTIRS). Bombardment at angles theta<40 degrees produces an amorphous layer of stoichiometric Si3N4 the thickness of which depends on implantation energy and incidence angle. Annealing of the samples at 1000 degrees C produces layers with rather sharp interfaces. (C) 1999 Elsevier Science B.V. All rights reserved.