ROOM-TEMPERATURE FORMATION OF SI-NITRIDE FILMS BY LOW-ENERGY NITROGEN ION-IMPLANTATION INTO SILICON

被引：46

作者：

HEZEL, R

LIESKE, N

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 02期

关键词：

D O I：

10.1149/1.2123852

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

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页码：379 / 383

页数：5

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