Surface electromigration of metals on Si(001):In/Si(001)

被引：19

作者：

Kono, S ^{[1
]}

Goto, T ^{[1
]}

Ogura, Y ^{[1
]}

Abukawa, T ^{[1
]}

机构：

[1] Tohoku Univ, Sci Measurements Res Inst, Sendai, Miyagi 9808577, Japan

来源：

SURFACE SCIENCE | 1999年 / 420卷 / 2-3期

关键词：

adatoms; antimony; diffusion and migration; gallium; indium; low index single crystal surfaces; silicon; silver;

D O I：

10.1016/S0039-6028(98)00825-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The possibility of surface electromigration (SE) of metals of In, Ga, Sb and Ag on a very flat Si(001)2 x 1 substrate (single domain 2 x 1) was examined by SEM, mu-RHEED and mu-AES under UHV conditions. It was found that Ga, Sb and Ag show no SE on Si(001) surface even at DC annealing temperatures for the desorption of these metals. For In on Si(001), a very fast SE (similar to 8000 mu m/min) towards the cathode side was found that suddenly sets in at similar to 450 degrees C DC annealing, which was related to a surface phase transition. mu-RHEED and mu-AES observation showed that the SE is related to an ordered 4 x 3-In phase together with two-dimensional In gas phase over the 4 x 3-In phase and an In-disordered phase at the front end of SE. Single domain 4 x 3-In phases were found to occur under sequences of In deposition and DC annealing which involve the In SE on Si(001). (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：200 / 212

页数：13

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