Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM

被引:117
作者
Ielmini, Daniele [1 ,2 ]
Nardi, Federico [1 ,2 ]
Cagli, Carlo [1 ,2 ]
机构
[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy
[2] Politecn Milan, Italian Univ Nanoelect Team IU NET, I-20133 Milan, Italy
关键词
Memory modeling; nonvolatile memory; resistive-switching memory (RRAM); LOW-POWER; MECHANISM; MODEL;
D O I
10.1109/TED.2011.2161088
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
080906 [电磁信息功能材料与结构]; 082806 [农业信息与电气工程];
摘要
Set and reset characteristics are studied for unipolar and bipolar metal-oxide resistive-switching memory devices. We show a universal dependence of set-state resistance and reset current on the compliance current used during set, with negligible impact of metal-oxide composition and switching condition. An analytical Joule-heating model for universal reset is presented, predicting a weak dependence of reset temperature and voltage on diffusion and migration parameters in both unipolar-and bipolar-switching modes. Data for the reset voltage are shown for a wide range of unipolar and bipolar metal oxides, in support of our calculations.
引用
收藏
页码:3246 / 3253
页数:8
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