Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM

被引：117

作者：

Ielmini, Daniele ^{[1
,2
]}

Nardi, Federico ^{[1
,2
]}

Cagli, Carlo ^{[1
,2
]}

机构：

[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

[2] Politecn Milan, Italian Univ Nanoelect Team IU NET, I-20133 Milan, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 10期

关键词：

Memory modeling; nonvolatile memory; resistive-switching memory (RRAM); LOW-POWER; MECHANISM; MODEL;

D O I：

10.1109/TED.2011.2161088

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

080906 [电磁信息功能材料与结构]; 082806 [农业信息与电气工程];

摘要：

Set and reset characteristics are studied for unipolar and bipolar metal-oxide resistive-switching memory devices. We show a universal dependence of set-state resistance and reset current on the compliance current used during set, with negligible impact of metal-oxide composition and switching condition. An analytical Joule-heating model for universal reset is presented, predicting a weak dependence of reset temperature and voltage on diffusion and migration parameters in both unipolar-and bipolar-switching modes. Data for the reset voltage are shown for a wide range of unipolar and bipolar metal oxides, in support of our calculations.

引用

页码：3246 / 3253

页数：8

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