Modulation in optical second harmonic generation signal from channel of pentacene field effect transistors during device operation

被引：61

作者：

Manaka, T ^{[1
]}

Lim, E ^{[1
]}

Tamura, R ^{[1
]}

Iwamoto, M ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 22期

关键词：

D O I：

10.1063/1.2136075

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The channel formation process of the pentacene field effect transistor (FET) was shown by the optical second harmonic generation (SHG) ascribed to the electric field induced SHG. The SHG signal probed successfully and nondestructively the off and on states. The enhancement of the SHG signal at the off state was observed with applying the source-drain voltage in the absence of the gate voltage, whereas it remarkably decayed with applying the gate voltage, indicating the channel formation. At the channel formation, holes injected from the source electrode changed the potential profile in pentacene film at the off state and the SHG signal was suppressed. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 16 条

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