Charge trapping in irradiated SOI wafers measured by second harmonic generation

被引：19

作者：

Jun, B

Schrimpf, RD

Fleetwood, DA

White, YV

Pasternak, R

Rashkeev, SN

Brunier, F

Bresson, N

Fouillat, M

Cristoloveanu, S

Tolk, NH

机构：

[1] Vanderbilt Univ, Nashville, TN 37232 USA

[2] SOITEC, F-38926 Crolles, France

[3] ENSERG, F-38016 Grenoble, France

[4] Univ Bordeaux 1, Dept IUT, F-33405 Talence, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 06期

关键词：

pseudo-MOSFET; radiation effects; second harmonic generation (SHG); silicon on insulator (SOI); total dose; UNIBOND;

D O I：

10.1109/TNS.2004.839140

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Total dose effects on silicon on insulator (SOI) UNI-BOND wafers are studied via optical second harmonic generation (SHG). This technique is qualitatively compared with the pseudo-MOSFET technique for monitoring charges at the interfaces. Optical and electrical methods are combined to separate the contribution of the signal from each interface to the total SHG intensity. Radiation-induced oxide and interface traps increase the interface fields as determined from the SHG signals and the results are compared with electrical measurements.

引用

页码：3231 / 3237

页数：7

共 13 条

[1] Electron photoinjection from silicon to ultrathin SiO2 films via ambient oxygen [J].