POINT-CONTACT PSEUDO-MOSFET FOR INSITU CHARACTERIZATION OF AS-GROWN SILICON-ON-INSULATOR WAFERS

被引：105

作者：

CRISTOLOVEANU, S

WILLIAMS, S

机构：

[1] Laboratoire de Physique des Composants à Semiconducteurs (UA-CNRS), Institut National Polytechnique de Grenoble, ENSERG

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 02期

关键词：

D O I：

10.1109/55.144972

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A pseudo-MOS transistor can be activated in as-grown silicon-on-insulator (SOI) structures without any device processing by using point-contact probes. The measurement setup for in-situ operation and typical transistor characteristics are presented. Parameters are extracted which relate to minority and majority carriers, buried oxide, and Si-SiO2 interface.

引用

页码：102 / 104

页数：3

共 5 条

[1] NEW METHOD FOR THE EXTRACTION OF MOSFET PARAMETERS
GHIBAUDO, G
[J]. ELECTRONICS LETTERS, 1988, 24 (09) : 543 - 545
[2] OPTIMIZATION OF SIMOX FOR VLSI BY ELECTRICAL CHARACTERIZATION
IOANNOU, DE
CRISTOLOVEANU, S
POTAMIANOS, CN
ZHONG, XD
MCLARTY, PK
HUGHES, HL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (03) : 463 - 468
[3] LIU ST, 1990, P IEEE SOS SOI TECH, P61
[4] HOT-CARRIER-INDUCED DEGRADATION OF THE BACK INTERFACE IN SHORT-CHANNEL SILICON-ON-INSULATOR MOSFETS
OUISSE, T
CRISTOLOVEANU, S
BOREL, G
[J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (06) : 290 - 292
[5] SCHRODER DK, 1990, SEMICONDUCTOR MATERI

← 1 →