A review of the pseudo-MOS transistor in SOI wafers: Operation, parameter extraction, and applications

被引：176

作者：

Cristoloveanu, S ^{[1
]}

Munteanu, D

Liu, MST

机构：

[1] ENSERG, UMR CNRS, Lab Composants Semicond, F-38016 Grenoble 1, France

[2] ENSERG, INPG, Lab Composants Semicond, F-38016 Grenoble, France

[3] Honeywell SSEC, Plymouth, MN 55441 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 05期

关键词：

characterization; pseudo-MOSFET; SOI; SOI technology; unibond;

D O I：

10.1109/16.841236

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The pseudo-MOS transistor (Psi-MOSFET) is a surprising and useful technique for the rapid evaluation of SOI wafers, prior to any CMOS processing. We review the static and dynamic modes of operation as well as the main models and methods for electrical parameter extraction. Selected numerical simulations are presented in order to clarify the optimal conditions of operation. Finally, practical applications are exemplified which illustrate the efficiency of the Psi-MOSFET technique for in situ characterization of SOI technologies and processes.

引用

页码：1018 / 1027

页数：10

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