Model for carrier lifetime extraction from pseudo-MOSFET transients

被引：13

作者：

Cristoloveanu, S

Elewa, T

机构：

[1] Lab. Phys. Composants S., ENSERG, 38016 Grenoble Cedex

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 21期

关键词：

silicon-on-insulator; carrier lifetime;

D O I：

10.1049/el:19961319

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors propose a pulsing technique for pseudo-MOS transistor, for the advanced characterisation of thin SOI films. The resulting drain current transient can easily be processed to extract the carrier generation lifetime in virgin SOI wafers. The theoretical model and the basic experimental conditions are described.

引用

页码：2021 / 2023

页数：3

共 6 条

[1] POINT-CONTACT PSEUDO-MOSFET FOR INSITU CHARACTERIZATION OF AS-GROWN SILICON-ON-INSULATOR WAFERS [J].