INVESTIGATION OF CARRIER GENERATION IN FULLY DEPLETED ENHANCEMENT AND ACCUMULATION-MODE SOI MOSFETS

被引：26

作者：

SINHA, SP

ZALESKI, A

IOANNOU, DE

机构：

[1] Department of Electrical and Computer Engineering, George Mason University, Fairfax

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 12期

关键词：

D O I：

10.1109/16.337457

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An unified dual gate Zerbst-like technique has been developed to extract the generation lifetime in enhancement and accumulation mode fully depleted SOI MOSFET's, The technique is based on the analysis of the temporal variation of the quasi Fermi levels in the devices, following the application of a suitable voltage step on one of the gates. The analysis resulted in simple Zerbst-like expressions for the drain current transients, Numerical simulations, using PISCES, have been performed to validate the technique and its underlying analysis, The technique has been applied to both kinds of typical fully depleted SIMOX SOI MOSFET's and the measured generation lifetimes were in the range of 0.1 mu s to 1.0 mu s.

引用

页码：2413 / 2416

页数：4

共 12 条

[1] ANALYTICAL MODELS OF SUBTHRESHOLD SWING AND THRESHOLD VOLTAGE FOR THIN-FILM AND ULTRA-THIN-FILM SOI MOSFETS [J].