THE PULSED MIS CAPACITOR - A CRITICAL-REVIEW

[1] Calzolari P. U., 1972, Alta Frequenza, V41, P848

[2] FIELD-ENHANCED CARRIER GENERATION IN MOS CAPACITORS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (10) : 1001 - 1011

[3] GENERATION LIFETIME DETERMINATION FROM CURRENT VOLTAGE OR CURRENT-TIME MEASUREMENTS FOR UNKNOWN DOPING PROFILE [J]. SOLID-STATE ELECTRONICS, 1982, 25 (01) : 77 - 78

[4] NEW FAST TECHNIQUE FOR LARGE-SCALE MEASUREMENTS OF GENERATION LIFETIME IN SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) : 100 - 105

[5] INVESTIGATION OF GENERATION CHARACTERISTICS OF METAL-INSULATOR-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1053 - 1059

[6] A CONSTANT-CURRENT CHARGING TECHNIQUE FOR THE MEASUREMENT OF GENERATION RATES IN MOS CAPACITORS [J]. SOLID-STATE ELECTRONICS, 1983, 26 (03) : 199 - 209

[7] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 781 - +

[8] MINORITY CARRIER LIFETIME DETERMINATION FROM INVERSION LAYER TRANSIENT RESPONSE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 785 - +

[9] BULK LIFETIME DETERMINATION USING AN MOS CAPACITOR [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (11): : 1849 - +

[10] CARRIER CONCENTRATION AND MINORITY CARRIER LIFETIME MEASUREMENT IN SEMICONDUCTOR EPITAXIAL LAYERS BY MOS CAPACITANCE METHOD [J]. SOLID-STATE ELECTRONICS, 1966, 9 (04) : 315 - &

[1] Calzolari P. U., 1972, Alta Frequenza, V41, P848

[2] FIELD-ENHANCED CARRIER GENERATION IN MOS CAPACITORS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (10) : 1001 - 1011

[3] GENERATION LIFETIME DETERMINATION FROM CURRENT VOLTAGE OR CURRENT-TIME MEASUREMENTS FOR UNKNOWN DOPING PROFILE [J]. SOLID-STATE ELECTRONICS, 1982, 25 (01) : 77 - 78

[4] NEW FAST TECHNIQUE FOR LARGE-SCALE MEASUREMENTS OF GENERATION LIFETIME IN SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) : 100 - 105

[5] INVESTIGATION OF GENERATION CHARACTERISTICS OF METAL-INSULATOR-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1053 - 1059

[6] A CONSTANT-CURRENT CHARGING TECHNIQUE FOR THE MEASUREMENT OF GENERATION RATES IN MOS CAPACITORS [J]. SOLID-STATE ELECTRONICS, 1983, 26 (03) : 199 - 209

[7] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 781 - +

[8] MINORITY CARRIER LIFETIME DETERMINATION FROM INVERSION LAYER TRANSIENT RESPONSE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 785 - +

[9] BULK LIFETIME DETERMINATION USING AN MOS CAPACITOR [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (11): : 1849 - +

[10] CARRIER CONCENTRATION AND MINORITY CARRIER LIFETIME MEASUREMENT IN SEMICONDUCTOR EPITAXIAL LAYERS BY MOS CAPACITANCE METHOD [J]. SOLID-STATE ELECTRONICS, 1966, 9 (04) : 315 - &