INVESTIGATION OF GENERATION CHARACTERISTICS OF METAL-INSULATOR-SEMICONDUCTOR STRUCTURES

被引：10

作者：

GORBAN, AP ^{[1
]}

LITOVCHENKO, VG ^{[1
]}

MOSKAL, DN ^{[1
]}

机构：

[1] ACAD SCI UKSSR, SEMICOND INST, KIEV, UKRAINE

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 12期

关键词：

D O I：

10.1016/0038-1101(75)90166-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1053 / 1059

页数：7

共 25 条

[1] ELECTRICAL CHARACTERISTICS OF SIO2-SI INTERFACE NEAR MIDGAP AND IN WEAK INVERSION [J].

COOPER, JA ;

SCHWARTZ, RJ .

SOLID-STATE ELECTRONICS, 1974, 17 (07) :641-654

[2] INTERFACE STATES IN SI-SIO2 INTERFACES [J].

DEULING, H ;

KLAUSMANN, E ;

GOETZBERGER, A .

SOLID-STATE ELECTRONICS, 1972, 15 (05) :559-+

[3] SURFACE RECOMBINATION IN SEMICONDUCTORS [J].

FITZGERALD, DJ ;

GROVE, AS .

SURFACE SCIENCE, 1968, 9 (02) :347-+

[4]

Gorban' A. P., 1972, Poluprovodnikovaya Tekhnika i Mikroelektronika, P7

[5] INVESTIGATION OF FAST SURFACE STATE SPECTRUM OF MIS STRUCTURES BY A DIFFERENTIAL C-U METHOD [J].

GORBAN, AP ;

LITOVCHENKO, VG ;

PEIKOV, PC .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 10 (01) :289-+

[6]

GORBAN AP, 1975, UKR FIZ ZH, V20, P1

[7] EXPERIMENTAL STUDY OF SEMICONDUCTOR SURFACE CONDUCTIVITY [J].

GROSVALET, J ;

JUND, C ;

MOTSCH, C ;

POIRIER, R .

SURFACE SCIENCE, 1966, 5 (01) :49-+

[8] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J].

HEIMAN, FP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :781-+

[9] DETERMINATION OF MINORITY CARRIER LIFETIME AND SURFACE RECOMBINATION VELOCITY FROM TRANSIENT-RESPONSE OF MOS CAPACITORS [J].

KANO, Y ;

SHIBATA, A .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (08) :1161-+

[10]

LITOVCHENKO VG, 1967, ELECTRONNAYA TEKHN 2, P96

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