Improved characterization of fully-depleted SOI wafers by pseudo-MOS transistor

被引：10

作者：

Ionescu, AM ^{[1
]}

Cristoloveanu, S ^{[1
]}

Wilson, SR ^{[1
]}

Rusu, A ^{[1
]}

Chovet, A ^{[1
]}

Seghir, H ^{[1
]}

机构：

[1] MOTOROLA INC,MRST,MESA,AZ 85202

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 112卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(95)01279-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The pseudo-MOS transistor technique is used for quick, quasi-non destructive evaluation and comparison of several types of SOI wafers: SIMOX from different origins and wafer bonding. The effective mobility for electrons and holes, threshold voltages, film doping, interface state density and series resistances are extracted as a function of probes pressure (15-50 g). The form factor of the pseudo-MOS is accurately evaluated by comparison with four-point probe measurement taking into account the correction induced by series resistances.

引用

页码：228 / 232

页数：5