A new lifetime characterization technique using drain current transients in SOI material

A new technique based on the transient operation of the pseudo-MOS transistor is proposed for direct evaluation of generation lifetime and surface velocity in SOI wafers. The main advantages of the proposed technique are: (i) in situ operation (no prior processing ofa transistor), (ii) set-up simplicity, (iii) fast comparison of different SOI technologies and (iv) simple identification of Si-film conductivity type. The influence of the electrical and non-electrical parameters of this technique is systematically investigated. Various SOI wafers (SIMOX and UNIBOND) are compared. Copyright (C) 1996 Elsevier Science Ltd