TIME-DEPENDENT 2ND-HARMONIC GENERATION FROM THE SI-SIO2 INTERFACE INDUCED BY CHARGE-TRANSFER

被引：81

作者：

MIHAYCHUK, JG

BLOCH, J

LIU, Y

VANDRIEL, HM

机构：

[1] ONTARIO LASER & LIGHTWAVE RES CTR,TORONTO,ON M5S 1A7,CANADA

[2] NUCL RES INST NEGEV,BEER SHEVA,ISRAEL

来源：

OPTICS LETTERS | 1995年 / 20卷 / 20期

关键词：

D O I：

10.1364/OL.20.002063

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have observed that the second-harmonic signal generated from oxidized Si(001) varies on a time scale of several seconds in experiments involving a fundamental beam of lambda = 770 nm, 110-fs pulses at 76 MHz. We suggest that the temporal behavior arises from absorption of weak (< 100-fW average power) third-harmonic light generated in air or in the sample, inducing charge transfer across the Si-SiO2 interface and trapping in the oxide layer. Detrapping has been determined to take several minutes. (C) 1995 Optical Society of America

引用

页码：2063 / 2065

页数：3

共 29 条

[1]

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[2] OPTICAL SECOND-HARMONIC GENERATION INDUCED BY A DC ELECTRIC-FIELD AT THE SI-SIO2 INTERFACE [J].