Accurate SIMS doping profiling of aluminum-doped solid-phase epitaxy silicon islands

被引：7

作者：

Civale, Yann ^{[1
]}

Nanver, Lis K. ^{[1
]}

Alberici, Stefano G. ^{[2
]}

Gammon, Andrew ^{[2
]}

Kelly, Ian ^{[2
]}

机构：

[1] Delft Univ Technol, Delft Inst Microsyst & Nanoelect DIMES, Lab Elect Components Technol & Mat, NL-2628 CT Delft, Netherlands

[2] Brunel Univ, Evans Analyt Grp, Uxbridge UB8 3PH, Middx, England

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 04期

关键词：

D O I：

10.1149/1.2836739

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A procedure has been implemented for a quantitative aluminum-doping profiling of mu m-scale aluminum-induced solid-phase-epitaxy (SPE) Si islands formed at 400 degrees C. The aluminum concentration was measured to be 1-2 x 10(19) cm(-3), which is about 10 times higher than previously reported electrical activation levels. The elemental concentration was measured by secondary-ion-mass-spectroscopy (SIMS) on arrays of SPE Si islands grown by a recently developed process that allows control of the island geometry. (C) 2008 The Electrochemical Society.

引用

页码：H74 / H76

页数：3

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