Low-threshold AlGaN-GaN heterostructure field effect transistors for digital applications

被引：1

作者：

Gaska, R

Deng, J

Shur, MS

机构：

[1] APA Opt Inc, Blaine, MN 55449 USA

[2] Rensselaer Polytech Inst, CIEEM, Troy, NY 12180 USA

[3] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 25期

关键词：

D O I：

10.1049/el:19981665

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication of an AlGaN-GaN based digital inverter circuit is reported, in which a large gain (up to 180) and a noise margin of similar to 0.5V have been obtained. The measured temperature coefficient of the switching voltage of the inverter was similar to 3.5 mV/degrees C up to 90 degrees C. The simulations predict that such an inverter should operate up to similar to 230 degrees C.

引用

页码：2367 / 2368

页数：2

共 6 条

[1]

BROWN RB, 1996, HIGH TEMPERATURE ELE, P67

[2]

Fjeldly T, 1998, INTRO DEVICE CIRCUIT

[3] Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors [J].