Bulk and interface properties of molybdenum trioxide-doped hole transporting layer in organic light-emitting diodes

被引：93

作者：

Shin, Won-Ju ^{[1
]}

Lee, Je-Yun ^{[1
]}

Kim, Jae Chang ^{[1
]}

Yoon, Tae-Hoon ^{[1
]}

Kim, Tae-Shick ^{[2
]}

Song, Ok-Keun ^{[2
]}

机构：

[1] Pusan Natl Univ, Sch Elect Engn, Pusan 609735, South Korea

[2] Samsung SDI, R&D Ctr, Yongin 449577, Gyeonggi Do, South Korea

来源：

ORGANIC ELECTRONICS | 2008年 / 9卷 / 03期

关键词：

OLED; metal oxide; charge transfer complex; interface; stability;

D O I：

10.1016/j.orgel.2007.12.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Effects of doping molybdenum trioxide (MoO3) in N,N'-diphenyl-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (NPB) are studied at various thicknesses of doped layer (25-500 angstrom) by measuring the current-voltage characteristics, the capacitance-voltage characteristics and the operating lifetime. We formed charge transfer complex of NPB and MoO3 by co-evaporation of both materials to achieve higher charge density, lower operating voltage, and better reliability of devices. These improved performances may be attributed to both bulk and interface properties of the doped layer. The authors demonstrated that the interface effects play more important role in lowering the operating voltage and increasing the lifetime. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：333 / 338

页数：6

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