Further insight into the physics and modeling of floating-body capacitorless DRAMs

被引：2

作者：

Villaret, A ^{[1
]}

Ranica, R

Malinge, P

Masson, P

Martinet, B

Mazoyer, P

Candelier, P

Skotnicki, T

机构：

[1] STMicroelect, F-38926 Crolles, France

[2] CNRS, UMR 6137, Provence Mat & Microelect Lab, F-13451 Marseille, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 11期

关键词：

bipolar transistors; DRAM; floating-body effect; modeling; MOS devices;

D O I：

10.1109/TED.2005.857933

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report on parasitic bipolar conduction occurring in floating-body effect based capacitor-less DRAMs. A way to include these effects into a previously developed model is presented. The enhanced model is then compared with electrical data realized on triple-well nMOSFET devices within the 26 degrees C-100 degrees C temperature range.

引用

页码：2447 / 2454

页数：8

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