The gas-sensing properties of tin oxide thin films deposited by metallorganic chemical vapor deposition

被引：25

作者：

Brown, JR ^{[1
]}

Cheney, MT ^{[1
]}

Haycock, PW ^{[1
]}

Houlton, DJ ^{[1
]}

Jones, AC ^{[1
]}

Williams, EW ^{[1
]}

机构：

[1] UNIV KEELE,DEPT PHYS,KEELE ST5 5BG,STAFFS,ENGLAND

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1997年 / 144卷 / 01期

关键词：

D O I：

10.1149/1.1837398

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A series of undoped SnO2 films was grown by metallorganic chemical vapor deposition (MOCVD) from an Sn(O(t)Bu)(4) precursor. The characterization of their CO- and H2O-gas sensing properties is reported. The films were very sensitive to low levels of CO at elevated temperatures (200 to 400 degrees C), although a significant cross sensitivity to relative humidity was found. Response and recovery times were very short in comparison with a Pt-doped thick film SnO2 pellet. The optimum working temperature was found to be 300 to 350 degrees C, where linear responses to CO concentration and to relative humidity were seen once drift had been taken into account. All MOCVD films tested showed superior responses to a sputtered film.

引用

页码：295 / 299

页数：5

共 16 条

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