Non-vacuum and PLD growth of next generation TCO materials

被引：56

作者：

Ginley, D

Roy, B

Ode, A

Warmsingh, C

Yoshida, Y

Parilla, P

Teplin, C

Kaydanova, T

Miedaner, A

Curtis, C

Martinson, A

Coutts, T

Readey, D

Hosono, H

Perkins, J

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] Colorado Sch Mines, Golden, CO 80401 USA

[3] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

THIN SOLID FILMS | 2003年 / 445卷 / 02期

关键词：

laser ablation; oxides; solar cells; conductivity; indium oxide; copper oxide;

D O I：

10.1016/j.tsf.2003.08.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transparent conducting oxides represent a key component in a number of important opto-electronic technologies. The demand for improved materials is increasing. It is increasingly important to develop improved materials and process techniques. We report on the PLD growth of both Mo doped In-O, an n-type material with enhanced mobilities, and p-type Ca-CuInO2, films with improved conductivity. In both cases, very high quality films have been obtained with improved opto-electronic properties. We also report on a solution based route to p-type Cu2SrO2 which has produced phase pure films. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：193 / 198

页数：6

共 18 条

[1] THERMODYNAMIC STUDY OF THE CU-SR-O SYSTEM [J].