The control of graphene double-layer formation in copper-catalyzed chemical vapor deposition

被引：114

作者：

Kalbac, Martin ^{[1
]}

Frank, Otakar ^{[1
]}

Kavan, Ladislav ^{[1
]}

机构：

[1] Acad Sci CR, J Heyrovsky Inst Phys Chem, Prague 18223 8, Czech Republic

来源：

CARBON | 2012年 / 50卷 / 10期

关键词：

LARGE-AREA; GROWTH; CARBON; FILMS;

D O I：

10.1016/j.carbon.2012.03.041

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The growth of graphene during Cu-catalyzed chemical vapor deposition was studied using (CH4)-C-12 and (CH4)-C-13 precursor gasses. We suggest that the growth begins by the formation of a multilayer cluster. This seed increases its size but the growth speed of a particular layer depends on its proximity to the copper surface. The layer closest to the substrate grows fastest and thus further limits the growth rate of the upper layers. Nevertheless, the growth of the upper layers continues until the copper surface is completely blocked. It is shown that the upper layers can be removed by modification of the conditions of the growth by hydrogen etching. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：3682 / 3687

页数：6

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