Size dependent photoluminescence from Si nanoclusters produced by laser ablation

被引:35
作者
Patrone, L
Nelson, D
Safarov, V
Sentis, M
Marine, W
机构
[1] Fac Sci Luminy, Groupement Interdisciplinaire Ablat Laser & Appli, GPEC UMR CNRS 6631, F-13288 Marseille 9, France
[2] IRPHE, LP3 UMR CNRS 6594, F-13288 Marseille, France
关键词
laser ablation; silicon nanocluster; photoluminescence; quantum size effect;
D O I
10.1016/S0022-2313(98)00101-X
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report a photoluminescence study of silicon nanoclusters deposited by laser ablation. This technique allows to obtain clusters with a reduced size dispersion. Taking advantage of that as well as of the possibility to tune selectively the cluster size relatively to the preparation parameters, we are able to make a fine correlation between the emission band and the corresponding emitting size. The photoluminescence band can be tuned in a wide spectral region spreading from the near ultraviolet to the near infrared depending on preparation conditions. The correlation with atomic force microscopy measurements provides a size dependence of the luminescence which is fully consistent with the quantum confinement interpretation. To our knowledge, we present here the first observation of a wide spectral range tuning of the emission bands of nanocrystalline silicon by using a dry technique compatible with clean vacuum processing. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:217 / 221
页数:5
相关论文
共 9 条
[1]  
BRANDT MS, 1992, SOLID STATE COMMUN, V81, P302
[2]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[3]   QUANTUM CONFINEMENT IN SI NANOCRYSTALS [J].
DELLEY, B ;
STEIGMEIER, EF .
PHYSICAL REVIEW B, 1993, 47 (03) :1397-1400
[4]   Optical properties of passivated Si nanocrystals and SiOx nanostructures [J].
Dinh, LN ;
Chase, LL ;
Balooch, M ;
Siekhaus, WJ ;
Wooten, F .
PHYSICAL REVIEW B, 1996, 54 (07) :5029-5037
[5]   Luminescence from plasma deposited silicon films [J].
Edelberg, E ;
Bergh, S ;
Naone, R ;
Hall, M ;
Aydil, ES .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (05) :2410-2417
[6]   SEMICONDUCTOR CLUSTER BEAMS - ONE AND 2 COLOR IONIZATION STUDIES OF SIX AND GEX [J].
HEATH, JR ;
LIU, Y ;
OBRIEN, SC ;
ZHANG, QL ;
CURL, RF ;
TITTEL, FK ;
SMALLEY, RE .
JOURNAL OF CHEMICAL PHYSICS, 1985, 83 (11) :5520-5526
[7]   Photoluminescence mechanism in surface-oxidized silicon nanocrystals [J].
Kanemitsu, Y ;
Okamoto, S ;
Otobe, M ;
Oda, S .
PHYSICAL REVIEW B, 1997, 55 (12) :R7375-R7378
[8]  
KANEMITSU Y, 1995, MATER RES SOC SYMP P, V358, P81
[9]  
Marine W, 1996, MATER RES SOC SYMP P, V397, P365