Partial dislocations in the X-ray topography of as-grown hexagonal silicon carbide crystals

被引:12
作者
Vetter, WM [1 ]
Dudley, M [1 ]
机构
[1] SUNY Stony Brook, Dept Mat Sci & Engn, Stony Brook, NY 11794 USA
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 87卷 / 02期
关键词
X-ray topographs; silicon carbide crystals; dislocations;
D O I
10.1016/S0921-5107(01)00738-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Dislocations visible in X-ray topographs of as-grown hexagonal silicon carbide Lely platelets and physical vapor transport process wafers extinguished as if they had Burgers vectors of 1/3<11 (2)over bar0 >. Under the electron microscope, beneath the resolution of X-ray topography, short lengths of these dislocations were shown to consist of pairs of 1/3 < 10 (1) over bar0 > Shockley partials spanning narrow ribbons of stacking fault. An unusual example of a b = 1/3 < 11 (2) over bar0 > dislocation in a Lely platelet visibly separated into its partials in an X-ray topograph was presented. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:173 / 177
页数:5
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