DEFECTS IN SILICON-CARBIDE

[1] DISLOCATIONS IN SILICON CARBIDE [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) : 1359 - 1370

[2] AMELINCKX S, 1960, SILICON CARBIDE HIGH, P162

[3] BALLOFFET Y, 1971, AECL3673 AT EN CAN L

[4] BARBER DJ, 1970, J MATER SCI, V5, P1, DOI 10.1007/BF02427178

[5] IMPERFECTIONS IN SOLUTION-GROWN BETA-SILICON CARBIDE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (05) : 2324 - +

[6] ELECTRON MICROSCOPY OF DISLOCATIONS AND OTHER DEFECTS IN SAPPHIRE AND IN SILICON CARBIDE THINNED BY SPUTTERING [J]. PHYSICA STATUS SOLIDI, 1965, 9 (02): : 635 - &

[7] DEFORMATION BEHAVIOR OF DENSE POLYCRYSTALLINE SIC [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1966, 49 (05) : 264 - +

[8] CREEP OF POLYCRYSTALLINE SILICON CARBIDE [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1968, 51 (02) : 115 - &

[9] FRANSEVITCH IN, 1970, SILICON CARBIDE, P13

[10] CHEMICAL ETCHING STUDIES AND TRANSMISSION ELECTRON MICROSCOPY OF SILICON CARBIDE [J]. NATURE, 1963, 199 (489) : 1054 - &

[1] DISLOCATIONS IN SILICON CARBIDE [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) : 1359 - 1370

[2] AMELINCKX S, 1960, SILICON CARBIDE HIGH, P162

[3] BALLOFFET Y, 1971, AECL3673 AT EN CAN L

[4] BARBER DJ, 1970, J MATER SCI, V5, P1, DOI 10.1007/BF02427178

[5] IMPERFECTIONS IN SOLUTION-GROWN BETA-SILICON CARBIDE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (05) : 2324 - +

[6] ELECTRON MICROSCOPY OF DISLOCATIONS AND OTHER DEFECTS IN SAPPHIRE AND IN SILICON CARBIDE THINNED BY SPUTTERING [J]. PHYSICA STATUS SOLIDI, 1965, 9 (02): : 635 - &

[7] DEFORMATION BEHAVIOR OF DENSE POLYCRYSTALLINE SIC [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1966, 49 (05) : 264 - +

[8] CREEP OF POLYCRYSTALLINE SILICON CARBIDE [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1968, 51 (02) : 115 - &

[9] FRANSEVITCH IN, 1970, SILICON CARBIDE, P13

[10] CHEMICAL ETCHING STUDIES AND TRANSMISSION ELECTRON MICROSCOPY OF SILICON CARBIDE [J]. NATURE, 1963, 199 (489) : 1054 - &