CHEMICAL ETCHING STUDIES AND TRANSMISSION ELECTRON MICROSCOPY OF SILICON CARBIDE

被引：5

作者：

GABOR, T

STICKLER, R

机构：

来源：

关键词：

D O I：

10.1038/1991054a0

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：1054 / &

共 6 条

[1] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON
BOOKER, GR
STICKLER, R
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3281 - &
[2] METHOD OF PREPARING SI AND GE SPECIMENS FOR EXAMINATION BY TRANSMISSION ELECTRON MICROSCOPY
BOOKER, GR
STICKLER, R
[J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1962, 13 (09): : 446 - &
[3] FAUST JW, 1959, P C SILICON CARBIDE, P403
[4] MELLOR JW, 1927, COMPREHENSIVE TREATI, V7, P703
[5] MELLOR JW, 1925, COMPREHENSIVE TREATI, V6, P886
[6] SMITH RV, TO BE PUBLISHED