Preparation of high-quality Ge substrate for MBE

被引：24

作者：

Akane, T

Tanaka, J

Okumura, H

Matsumoto, S

机构：

[1] Department of Electrical Engineering, Faculty of Science and Technology, Keio University, Yokohama 223, 3-14-1, Hiyoshi

来源：

APPLIED SURFACE SCIENCE | 1997年 / 108卷 / 02期

基金：

日本学术振兴会;

关键词：

D O I：

10.1016/S0169-4332(96)00854-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A high-quality Ge substrate suitable for molecular beam epitaxy (MBE) was prepared. First, native oxide on the Ge substrate was removed selectively using aqueous ammonia solution. X-ray photoelectron spectroscopy (XPS) data showed that the native oxide was completely removed after ammonia etching for 120 s. An atomic force microscope (AFM) image showed that the surface obtained after ammonia etching for 300 s has good uniformity. A highly ordered 2 x 1 reflection high-energy electron diffraction (RHEED) pattern appeared after desorption of the chemically formed protective oxide layer by annealing at 400 degrees C for 30 min in ultrahigh vacuum.

引用

页码：303 / 305

页数：3

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