ATOMIC LAYER EPITAXY OF SI ON GE(100) USING SI2CL6 AND ATOMIC-HYDROGEN

The surface composition is measured during atomic layer epitaxy (ALE) growth of Si on Ge(100) using Si2Cl6 and atomic hydrogen (H-at) at T-S=400 degrees C. During each Si2Cl6 exposure, Si is adsorbed until Cl fully terminates the surface, making the Si deposition step self-limiting. The terminating Cl layer is removed by H-at exposure. At 400 degrees C, H-2 rapidly desorbs from Ge(100) and Si/Ge alloy surfaces, regenerating the surface dangling bonds for the next Si2Cl6 adsorption cycle. A thin alloy is grown epitaxially on the Ge(100) substrate, which displays a linear increase in Si content and a linear decrease in Ge content, measured over 1-20 Si ALE cycles.