PRECURSORS FOR SI ATOMIC LAYER EPITAXY - REAL-TIME ADSORPTION STUDIES ON SI(100)

被引：25

作者：

KOLESKE, DD

GATES, SM

BEACH, DB

机构：

[1] IBM T. J. Watson Research Center, Yorktown Heights

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 15期

关键词：

D O I：

10.1063/1.108405

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Adsorption of SiClH3 and SiCl2H2 on Si(100) is studied as a function of surface temperature, comparing these precursors for Si atomic layer epitaxy (ALE). At 450-550-degrees-C, a substantial surface H coverage (theta(H)) exists during SiClH3 adsorption, and theta(H) exhibits transient behavior. During SiCl2H2 adsorption, theta(H) is much smaller. At 500-degrees-C with SiCl2H2, congruent-to 1 monolayer of Cl is formed after congruent-to 4 X 10(19) cm-2 exposure. Dichlorosilane is a suitable precursor for Si ALE, but desorption of HCl is significant at T > 500-degrees-C so that SiCl2H2 adsorption is not strictly self-limiting.

引用

页码：1802 / 1804

页数：3

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