HYDROGEN COVERAGE DURING SI GROWTH FROM SIH4 AND SI2H6

Time-of-flight direct recoiling (DR) measurements of surface hydrogen coverage (theta(H)) are made in situ during chemical beam epitaxy growth of Si from Si2H6 on Si(100) as a function of temperature and disilane flux. Temperatures (T) of 300-900-degrees-C and fluxes from 10(15) to 10(17) molecules cm-2 s-1 are used. Limited data for SiH4 are also presented. Predictions of theta(H) from a steady state kinetic model are compared with the measurements, enabling the reactive sticking probability (S) of Si2H6 to be estimated at T > 500-degrees-C.