SELF-LIMITING ADSORPTION OF SICL2H2 AND ITS APPLICATION TO THE LAYER-BY-LAYER PHOTOCHEMICAL PROCESS

被引：40

作者：

TAKAHASHI, Y

URISU, T

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01, 3-1, Morinosato wakamiya

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 2A期

关键词：

ATOMIC LAYER EPITAXY; LAYER-BY-LAYER GROWTH; SI EPITAXY; SYNCHROTRON RADIATION; ADSORPTION; THERMAL DESORPTION; SURFACE REACTIONS;

D O I：

10.1143/JJAP.30.L209

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Adsorption of SiCl2H2 on the Ge(100) clean surface is investigated by X-ray photoelectron spectroscopy and thermal desorption spectrum measurement. It is concluded that the adsorption is self-limiting at temperatures below 350-degrees-C, and that the surface is reactivated by synchrotron radiation. The sequential processes of self-limiting adsorption of SiCl2H2 and synchrotron radiation are promising for development of Si atomic layer epitaxy.

引用

页码：L209 / L211

页数：3

共 12 条

[1] THEORETICAL-STUDIES ON THE GROWTH MECHANISMS OF SILICON THIN-FILMS BY ATOMIC LAYER EPITAXY [J].