GERMANIUM ATOMIC LAYER EPITAXY CONTROLLED BY SURFACE CHEMICAL-REACTIONS

被引：48

作者：

TAKAHASHI, Y

ISHII, H

FUJINAGA, K

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 06期

关键词：

D O I：

10.1149/1.2097029

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1826 / 1827

页数：2

共 9 条

[1] ATOMIC LAYER EPITAXY OF III-V BINARY COMPOUNDS [J].

BEDAIR, SM ;

TISCHLER, MA ;

KATSUYAMA, T ;

ELMASRY, NA .

APPLIED PHYSICS LETTERS, 1985, 47 (01) :51-53

[2] TEMPERATURE-PROGRAMMED DESORPTION AND REACTION - APPLICATIONS TO SUPPORTED CATALYSTS [J].

FALCONER, JL ;

SCHWARZ, JA .

CATALYSIS REVIEWS-SCIENCE AND ENGINEERING, 1983, 25 (02) :141-227

[3] ATOMIC LAYER EPITAXY [J].

GOODMAN, CHL ;

PESSA, MV .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) :R65-R81

[4] SELECTIVE GE DEPOSITION ON SI USING THERMAL-DECOMPOSITION OF GEH4 [J].

ISHII, H ;

TAKAHASHI, Y ;

MUROTA, J .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :863-865

[5] MOLECULAR LAYER EPITAXY [J].

NISHIZAWA, J ;

ABE, H ;

KURABAYASHI, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) :1197-1200

[6]

Riviere P., 1982, COMPREHENSIVE ORGANO, V2, P399

[7]

SKINNER HA, 1964, ADV ORGANOMET CHEM, V2, P49

[8]

SUNTOLA T, 1980, SOC INFORMATION DISP, P109

[9]

USUI A, 1985, 12TH INT S GALL ARS

← 1 →