THEORETICAL-STUDIES ON THE GROWTH MECHANISMS OF SILICON THIN-FILMS BY ATOMIC LAYER EPITAXY

被引：15

作者：

HIRVA, P

PAKKANEN, TA

机构：

来源：

SURFACE SCIENCE | 1989年 / 220卷 / 01期

关键词：

D O I：

10.1016/0039-6028(89)90468-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：137 / 151

页数：15

共 42 条

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