EPITAXIAL-GROWTH OF SILICON BY CVD IN A HOT-WALL FURNACE

被引：19

作者：

BLOEM, J

OEI, YS

DEMOOR, HHC

HANSSEN, JHL

GILING, LJ

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 08期

关键词：

D O I：

10.1149/1.2114264

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1973 / 1980

页数：8

相关论文

共 37 条

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