FACILE ABSTRACTION OF CHEMISORBED-D ON SI(100) BY ATOMIC-H

被引：72

作者：

KOLESKE, DD ^{[1
]}

GATES, SM ^{[1
]}

SCHULTZ, JA ^{[1
]}

机构：

[1] IONWERKS INC,HOUSTON,TX 77005

来源：

JOURNAL OF CHEMICAL PHYSICS | 1993年 / 99卷 / 07期

关键词：

D O I：

10.1063/1.465955

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The abstraction of chemisorbed deuterium (D) on Si(100) by atomic hydrogen (H(at)) is studied in real time. The surface H and D coverages are measured by mass analyzing the recoiled H+ and D+ ion signals during the abstraction reaction. We find that H(at) efficiently removes adsorbed D on Si(100) with a low activation energy of 0.8+/-0.6 kcal/mol and a reaction probability that is 0.36 times the H(at) adsorption rate on clean Si(100).

引用

页码：5619 / 5622

页数：4

共 30 条

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