EPITAXIAL SI FILMS ON GE(100) GROWN VIA H/CL EXCHANGE

被引:26
作者
GATES, SM
KOLESKE, DD
HEATH, JR
COPEL, M
机构
[1] IBM T. J. Watson Research Center, Yorktown Heights
关键词
D O I
10.1063/1.108895
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thin Si films have been grown isothermally on Ge(100) substrates using alternating exposures of Si2H6 and Si2Cl6, maintaining chlorine and hydrogen surface termination. At 465-degrees-C, film growth rate is roughly 2 monolayer per cycle (one cycle equals 1 Si2H6 and 1 Si2Cl6 exposure). At 475-degrees-C a uniform epitaxial film is obtained, while islanding is observed at higher T. This process is thermally activated and is not strictly self-limiting, but has certain desirable characteristics of atomic layer epitaxy growth.
引用
收藏
页码:510 / 512
页数:3
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