HETEROEPITAXY OF SI FILMS ON A GE(100)-2X1 SURFACE

被引：21

作者：

KAWABATA, H

UEBA, H

TATSUYAMA, C

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.343530

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：634 / 639

页数：6

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