CONDUCTION-BAND OF SI-GEXSI1-X SUPERLATTICES USING THE ENVELOPE-FUNCTION APPROXIMATION

被引：14

作者：

DESTERKE, CM

HALL, DG

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.35.1380

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1380 / 1387

页数：8

共 37 条

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES
ABSTREITER, G
BRUGGER, H
WOLF, T
JORKE, H
HERZOG, HJ
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (22) : 2441 - 2444
[2] ALTARELLI M, 1982, HDB SEMICONDUCTORS, V1, P269
[3] [Anonymous], 1985, SYNTHETIC MODULATED
[4] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM
BALSLEV, I
[J]. PHYSICAL REVIEW, 1966, 143 (02): : 636 - &
[5] SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION
BASTARD, G
[J]. PHYSICAL REVIEW B, 1981, 24 (10): : 5693 - 5697
[6] THEORETICAL INVESTIGATIONS OF SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION
BASTARD, G
[J]. PHYSICAL REVIEW B, 1982, 25 (12) : 7584 - 7597
[7] BASTARD G, 1985, MOL BEAM EPITAXY HET, pCH11
[8] BEAM JC, 1984, J VAC SCI TECHNOL A, V2, P436
[9] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS
BRAUNSTEIN, R
MOORE, AR
HERMAN, F
[J]. PHYSICAL REVIEW, 1958, 109 (03): : 695 - 710
[10] CALLAWAY J, 1974, QUANTUM THEORY SOL A, P246