INITIAL-STAGE OF HETEROEPITAXY OF GE ON SI(111)-7 X 7 AND (100)-2 X 1 SURFACES STUDIED BY LOW-ENERGY ELECTRON-LOSS SPECTROSCOPY (LEELS)

被引：24

作者：

ISHIMARU, N

UEBA, H

TATSUYAMA, C

机构：

来源：

SURFACE SCIENCE | 1988年 / 193卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(88)90331-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：193 / 211

页数：19

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共 30 条

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES
ABSTREITER, G
BRUGGER, H
WOLF, T
JORKE, H
HERZOG, HJ
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (22) : 2441 - 2444
[2] HETEROEPITAXIAL GROWTH OF GE FILMS ON THE SI(100)-2X1 SURFACE
ASAI, M
UEBA, H
TATSUYAMA, C
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2577 - 2583
[3] TUNNELING IMAGES OF THE 5X5 SURFACE RECONSTRUCTION ON GE-SI(111)
BECKER, RS
GOLOVCHENKO, JA
SWARTZENTRUBER, BS
[J]. PHYSICAL REVIEW B, 1985, 32 (12): : 8455 - 8457
[4] GE-SI LAYERED STRUCTURES - ARTIFICIAL CRYSTALS AND COMPLEX CELL ORDERED SUPERLATTICES
BEVK, J
MANNAERTS, JP
FELDMAN, LC
DAVIDSON, BA
OURMAZD, A
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (05) : 286 - 288
[5] RAMAN-SCATTERING FROM GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES
CERDEIRA, F
PINCZUK, A
BEAN, JC
BATLOGG, B
WILSON, BA
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1138 - 1140
[6] RAMAN-SCATTERING INVOLVING UMKLAPP PROCESSES IN SI/GEXSI1-X SUPERLATTICES
DHARMAWARDANA, MWC
LOCKWOOD, DJ
BARIBEAU, JM
HOUGHTON, DC
[J]. PHYSICAL REVIEW B, 1986, 34 (04): : 3034 - 3036
[7] GAAS LIGHT-EMITTING-DIODES FABRICATED ON GE-COATED SI SUBSTRATES
FLETCHER, RM
WAGNER, DK
BALLANTYNE, JM
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (10) : 967 - 969
[8] 7X7 RECONSTRUCTION OF GE(111) SURFACES UNDER COMPRESSIVE STRAIN
GOSSMANN, HJ
BEAN, JC
FELDMAN, LC
MCRAE, EG
ROBINSON, IK
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (10) : 1106 - 1109
[9] GOSSMANN HJ, 1984, SURF SCI, V138, pL175, DOI 10.1016/0039-6028(84)90247-4
[10] SI(111)(7X7)-GE AND SI(111)(5X5)-GE SURFACES STUDIED BY ANGLE-RESOLVED ELECTRON-ENERGY-LOSS SPECTROSCOPY
HASEGAWA, S
IWASAKI, H
LI, ST
NAKAMURA, S
[J]. PHYSICAL REVIEW B, 1985, 32 (10): : 6949 - 6951